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BUV48AFI - STMicroelectronics

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BUV48AFI HIGH POWER NPN SILICON TRANSISTORS

The BUX48/A, BUV48A and BUV48AFI are silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3 metal case, TO-218 plastic package and ISOWATT218 fully isolated package. They are particulary intended for switching and industrial applications from single and tree-phase mains. 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM For TO-3 Package Others Pa.

Features

BE = 10 Ω ) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Collector Peak Current non repetitive (t p <20 µ s) Base Current Base Peak Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 850 850 400 TO-3 175 -65 to200 200 January 2000 1/7 BUX48 / BUX48A / BUV48A / BUV48AFI THERMAL DATA TO-3 R thj-case Thermal Resistance Junction-case Max 1 TO-218 1 ISOWATT218 2.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol .

The same part from a different manufacturer

Datasheet BUV48AFI - Inchange Semiconductor BUV48AFI

·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device.

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