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·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUV26F BUV26AF BUV26F VCEO Collector-Emitter Voltage BUV.
isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.co.kr/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUV26F IC= 0.2A ;IB= 0; L= 25mH B BUV26F/AF CONDITIONS MIN 90 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 100 BUV26AF BUV26F BUV26AF BUV26F BUV26AF BUV26F BUV26AF BUV26F BUV26AF IC= 12A; IB= 1.2A IC= 10A; IB= 1.0A IC= 6A; IB= 0.6A B VCE(sat)-1 Collector-Emitter Saturation Voltage 1.5 V 1.0 0.6 V 0.5 2.0 V 1.5 1.2 V 1.2 1.0 3.0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUV26 |
STMicroelectronics |
MEDIUM POWER NPN SILICON TRANSISTOR |
|
| 2 | BUV26 |
ON Semiconductor |
NPN Silicon Power Transistor |
|
| 3 | BUV26 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BUV26 |
Comset Semiconductors |
SILICON POWER TRANSISTOR |
|
| 5 | BUV26 |
INCHANGE |
NPN Transistor |
|
| 6 | BUV26A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | BUV26A |
Comset Semiconductors |
SILICON POWER TRANSISTOR |
|
| 8 | BUV26AF |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 9 | BUV26G |
INCHANGE |
NPN Transistor |
|
| 10 | BUV20 |
Motorola Inc |
NPN Transistor |
|
| 11 | BUV20 |
ON Semiconductor |
NPN Silicon Power Transistor |
|
| 12 | BUV20 |
STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR |
|