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·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Col.
er Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com BUV26A SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IC=5A ;IB=0.5 A IC=10A; IB=1A IC=5A ;IB=0.5 A IC=10A; IB=1A 100 V Collector-emitter saturation voltage 0.5 V Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage 1.2 V Base-emitter saturation voltage 1.5 V Collector cut-off current VCE =200V;VBE =-1.5V;Tj=125 VEB=5V; IC=0 1.0 mA Emitter cut-off cur.
BUV26A - Comset Semiconductors
SEMICONDUCTORS BUV26 – BUV26A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They ar.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUV26 |
STMicroelectronics |
MEDIUM POWER NPN SILICON TRANSISTOR |
|
| 2 | BUV26 |
ON Semiconductor |
NPN Silicon Power Transistor |
|
| 3 | BUV26 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BUV26 |
Comset Semiconductors |
SILICON POWER TRANSISTOR |
|
| 5 | BUV26 |
INCHANGE |
NPN Transistor |
|
| 6 | BUV26AF |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 7 | BUV26F |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 8 | BUV26G |
INCHANGE |
NPN Transistor |
|
| 9 | BUV20 |
Motorola Inc |
NPN Transistor |
|
| 10 | BUV20 |
ON Semiconductor |
NPN Silicon Power Transistor |
|
| 11 | BUV20 |
STMicroelectronics |
HIGH CURRENT NPN SILICON TRANSISTOR |
|
| 12 | BUV20 |
Seme LAB |
NPN MULTI - EPITAXIAL POWER TRANSISTOR |
|