BUS133H - Inchange Semiconductor

BUS133H Silicon NPN Power Transistor

·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V.

Features

ied SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 3.0 V VBE(sat) Base-Emitter Saturation Voltage ICEV Collector Cutoff Current IEBO Emitter Cutoff Current IC= 10A; IB= 1A VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ VEB= 6V; IC= 0 1.5 V 0.25 1.5 mA 1.0 mA hFE DC Current Gain COB Output Capacitance Switching Times , Resistive Load IC= 15A ; VCE= 5V IE= 0 ; .