BUS132 - Inchange Semiconductor

BUS132 Silicon NPN Power Transistor

·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS132 500V (Min)-BUS132A APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS132 850 BUS132A 1000 V VCEO Collector-Emitt.

Features

2/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS132 BUS132A IC= 0.1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitter Saturation Voltage BUS132 IC= 3A; IB= 0.4A BUS132A IC= 3A; IB= 0.6A 2.5 V 1.0 VCE(sat)-2 Collector-Emitter Saturation Voltage BUS132 IC= 5A; IB= 0.66A BUS132A IC= 5A; IB= 1A 3.0 V 1.5 VBE(sat) ICEV IEBO Base-Emitter Saturation Voltage BUS132 IC= 5A; IB= 0.66A BUS132A IC= 5A; IB= 1A Collector Cutoff Current VCE=VCESMmax;VBE=-1.5V VCE=VCE.