·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage (VBE= 0) 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V.
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V VBE(sat) Base-Emitter Saturation Voltage ICEV Collector Cutoff Current IEBO Emitter Cutoff Current IC= 3A; IB= 0.3A VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ VEB= 6V; IC= 0 1.5 V 0.25 1.5 mA 1 mA hFE DC Current Gain COB Output Capacitance Switching Times , Resistive Load IC= 5A ; VCE= 5V IE= 0 ; VCB.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUS131 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | BUS131A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | BUS13 |
Seme LAB |
NPN POWER TRANSISTOR | |
4 | BUS13 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | BUS132 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | BUS132A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
7 | BUS132H |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | BUS133 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | BUS133A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | BUS133H |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
11 | BUS13A |
Seme LAB |
NPN POWER TRANSISTOR | |
12 | BUS13A |
SavantIC |
SILICON POWER TRANSISTOR |