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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
licon NPN Power Transistor BUS12A ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 5A; IB= 1A VCE=VCESMmax; VBE= 0 VCE= VCESMmax;VBE= 0;TJ= 125℃ VEB= 9V; IC= 0 1.5 V 1 3 mA 10 mA hFE DC Current Gain IC= 1A ; VCE= 5V 15 50 Switching Times , Resistive Load ton Turn-On Tim.
BUS12A - Seme LAB
BUS12A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUS12 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | BUS11A |
Seme LAB |
Bipolar NPN Device |
|
| 3 | BUS13 |
Seme LAB |
NPN POWER TRANSISTOR |
|
| 4 | BUS13 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | BUS131 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | BUS131A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | BUS131H |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | BUS132 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | BUS132A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | BUS132H |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | BUS133 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | BUS133A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|