·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.0A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCE.
onductor isc Silicon NPN Power Transistor isc Product Specification BUL39D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2.5A; IB= 0.5A VCE= 850V; VBE= 0 .
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds while maintain.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUL39 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
2 | BUL310 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
3 | BUL310 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | BUL310FP |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
5 | BUL310FP |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
6 | BUL310FP |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | BUL310PI |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS | |
8 | BUL310XI |
INCHANGE |
NPN Transistor | |
9 | BUL312 |
INCHANGE |
NPN Transistor | |
10 | BUL312FH |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
11 | BUL312FP |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
12 | BUL381 |
STMicroelectronics |
NPN POWER TRANSISTOR |