BUL312 - INCHANGE

BUL312 NPN Transistor

·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. ABS.

Features

,Junction to Ambient 62.5 ℃/W BUL312 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL312 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 9 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 0.7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3.