BUL312FH - STMicroelectronics

BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide R.B.S.O.A. ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Visol Tstg Tj August 2002 Pa.

Features

ltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 °C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 2500
  –65 to 150 150 Unit V V V A A A A W V °C °C 1/6 BUL312FH THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.47 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol ICES ICEO VEBO VCEO(sus)
* Pa.