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N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features s Low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automoti.
s Low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 327 mJ s ID ≤ 75 A s RDSon = 5.9 mΩ (typ) s Ptot ≤ 157 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 2 1 MBK106 Simplified outline mb mb Symbol d [1] g s MBB076 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] It is not possi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUK9504-40A |
NXP |
(BUK9x04-40A) TrenchMOS logic level FET |
|
| 2 | BUK9505-30A |
NXP |
TrenchMOS transistor Logic level FET |
|
| 3 | BUK9506-30 |
NXP |
TrenchMOS transistor Logic level FET |
|
| 4 | BUK9506-40B |
NXP Semiconductors |
N-Channel MOSFET |
|
| 5 | BUK9506-55A |
NXP |
TrenchMOS transistor Logic level FET |
|
| 6 | BUK9506-55A |
NXP Semiconductors |
TrenchMOS logic level FET |
|
| 7 | BUK9506-55B |
NXP |
(BUK9x06-55B) N-channel TrenchMOSTM logic level FET |
|
| 8 | BUK9506-75B |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 9 | BUK9508-55 |
NXP |
TrenchMOS transistor Logic level FET |
|
| 10 | BUK9508-55 |
NXP |
TrenchMOS transistor Logic level FET |
|
| 11 | BUK9508-55A |
NXP |
logic level FET |
|
| 12 | BUK9508-55A |
Philips |
transistor Logic level FET |
|