BUK9506-75B - NXP Semiconductors

BUK9506-75B N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Low conduction losses due to low on-state resistance  Suitable for lo.

Features

 AEC Q101 compliant
 Low conduction losses due to low on-state resistance
 Suitable for logic level gate drive sources
 Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
 12 V, 24 V and 42 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; se.