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N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible..
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) 2 MBB076 Simplified outline [1] mb mb mb Symbol d g s 1 MBK106 3 MBK116 1 2 3 MBK112 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT226 (I2-PAK) It is not possible to make connection to pin 2 of the SOT404 pa.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUK9505-30A |
NXP |
TrenchMOS transistor Logic level FET |
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| 2 | BUK9506-30 |
NXP |
TrenchMOS transistor Logic level FET |
|
| 3 | BUK9506-40B |
NXP Semiconductors |
N-Channel MOSFET |
|
| 4 | BUK9506-55A |
NXP |
TrenchMOS transistor Logic level FET |
|
| 5 | BUK9506-55A |
NXP Semiconductors |
TrenchMOS logic level FET |
|
| 6 | BUK9506-55B |
NXP |
(BUK9x06-55B) N-channel TrenchMOSTM logic level FET |
|
| 7 | BUK9506-75B |
NXP Semiconductors |
N-channel TrenchMOS logic level FET |
|
| 8 | BUK9507-30B |
NXP |
(BUK9x07-30B) TrenchMOS logic level FET |
|
| 9 | BUK9508-55 |
NXP |
TrenchMOS transistor Logic level FET |
|
| 10 | BUK9508-55 |
NXP |
TrenchMOS transistor Logic level FET |
|
| 11 | BUK9508-55A |
NXP |
logic level FET |
|
| 12 | BUK9508-55A |
Philips |
transistor Logic level FET |
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