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N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. Vbb HITFET â In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection M Drain Pin 2 and 4 (TAB) ESD Overload Protection Overtemperature Protection Short circuit Protection Source Pin 3 Complete product spectrum and additional i.
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Product Summary
Drain source voltage VDS
42 V
On-state resistance RDS(on) 50 mW
Nominal load current ID(Nom) 3.5 A
Clamping energy
EAS
3J
P / PG-TO252-3-11
Application
· All kinds of resistive, inductive and capacitive loads in switching or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BTS130 |
Siemens Semiconductor Group |
MOSFET |
|
| 2 | BTS130 |
Infineon Technologies AG |
MOSFET |
|
| 3 | BTS131 |
Siemens Semiconductor Group |
MOSFET |
|
| 4 | BTS131 |
Infineon Technologies AG |
MOSFET |
|
| 5 | BTS132 |
Siemens Semiconductor Group |
MOSFET |
|
| 6 | BTS132 |
Infineon Technologies AG |
MOSFET |
|
| 7 | BTS133 |
Siemens Semiconductor Group |
Smart Lowside Power Switch |
|
| 8 | BTS133 |
Infineon Technologies AG |
Smart Low Side Power Switch |
|
| 9 | BTS133TC |
Infineon |
Smart Low Side Power Switch |
|
| 10 | BTS100 |
Siemens Semiconductor Group |
Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic) |
|
| 11 | BTS100 |
Infineon Technologies AG |
Smart Highside Power Switch |
|
| 12 | BTS110 |
Siemens Semiconductor Group |
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |
|