N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions. Vbb + LOAD M 1 IN dv/dt lim itation C u rre n t lim itation O v e rvo lta g e protection D ra in 2 ESD O v e rlo a d p ro te c tio n O ve rtem perature p ro te c tio n SShhoorrtt cciirrccuuiitt pprrootteeccttiioonn Source 3 H IT F E .
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Short circuit and Overload protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
• AEC qualified
• Green product (RoHS compliant)
Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy
VDS RDS(on) I D(lim) I D(ISO) EAS
60 V 50 mΩ 21 A 7A 2000 mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• μC compatible power switch for 12 V a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BTS133 |
Siemens Semiconductor Group |
Smart Lowside Power Switch | |
2 | BTS133 |
Infineon Technologies AG |
Smart Low Side Power Switch | |
3 | BTS130 |
Siemens Semiconductor Group |
MOSFET | |
4 | BTS130 |
Infineon Technologies AG |
MOSFET | |
5 | BTS131 |
Siemens Semiconductor Group |
MOSFET | |
6 | BTS131 |
Infineon Technologies AG |
MOSFET | |
7 | BTS132 |
Siemens Semiconductor Group |
MOSFET | |
8 | BTS132 |
Infineon Technologies AG |
MOSFET | |
9 | BTS134D |
Infineon Technologies AG |
Smart Lowside Power Switch | |
10 | BTS100 |
Siemens Semiconductor Group |
Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic) | |
11 | BTS100 |
Infineon Technologies AG |
Smart Highside Power Switch | |
12 | BTS110 |
Siemens Semiconductor Group |
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) |