BTS110 - Siemens Semiconductor Group

BTS110 TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

TEMPFET® BTS 110 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 1 2 Pin 1 G 2 D 3 S Type BTS 110 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220AB Ordering Code C67078-A5008-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = .

Features

q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 1 2 Pin 1 G 2 D 3 S Type BTS 110 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220AB Ordering Code C67078-A5008-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 ± 20 10 1.75 40 37 500 40
  – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C
  – W A Unit V .