BTA1952J3 - Cystech Electonics Corp

BTA1952J3 PNP Transistor

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6 BTA1952J3 Features • Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A • Excellent DC current gain characteristics • Wide SOA • Complementary to BTC5103J3 • RoHS complia.

Features

• Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A
• Excellent DC current gain characteristics
• Wide SOA
• Complementary to BTC5103J3
• RoHS compliant package BVCEO IC RCESAT -100V -5A 150mΩ Symbol BTA1952J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :
*1. Single Pulse Pw=10ms BTA1952J3 Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -100 .