BTA1952I3 - Cystech Electonics Corp

BTA1952I3 PNP Transistor

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 BTA1952I3 Features BVCEO IC RCESAT -100V -5A 150mΩ • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA • Co.

Features

BVCEO IC RCESAT -100V -5A 150mΩ
• Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A
• Excellent DC current gain characteristics
• Wide SOA
• Complementary to BTC5103I3
• RoHS compliant package Symbol BTA1952I3 Outline TO-251 B：Base C：Collector E：Emitter B B CCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :
*1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -100 -60 -.