BTA1952E3 - Cystech Electonics Corp

BTA1952E3 PNP Transistor

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 BTA1952E3 Features • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA Symbol BTA1952E3 Outline TO-220AB B：Base C：Coll.

Features

• Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A
• Excellent DC current gain characteristics
• Wide SOA Symbol BTA1952E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Note :
*1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) IB Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -100 -80 -5 -5 -8 -1 2 40 150 -55~+150 Unit V V V
*1 A A W °C °C BTA1952E3 CYStek Prod.