Passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT258S-800R QUICK REFERENCE DATA SYMBOL VDRM, .
A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. 800 5 8 75 82 28 50 2 5 5 0.5 150 1251 UNIT V A A A A A2s A/µs A V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Note: Operation above 110˚C may require the use of a gate t.
isc Thyristors BT258S-800R APPLICATIONS ·It is suitable to fit all modes of control found in applications such as over.
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for u.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BT258S-800LT |
NXP Semiconductors |
SCR logic level | |
2 | BT258 |
NXP |
Thyristors logic level | |
3 | BT258-500R |
NXP |
Thyristors logic level | |
4 | BT258-600R |
NXP |
Thyristors logic level | |
5 | BT258-800R |
NXP |
Thyristors logic level | |
6 | BT258-800R |
WeEn |
Logic level thyristor | |
7 | BT258B |
NXP |
Thyristors logic level | |
8 | BT258B-500R |
NXP |
Thyristors logic level | |
9 | BT258B-600R |
NXP |
Thyristors logic level | |
10 | BT258B-800R |
NXP |
Thyristors logic level | |
11 | BT258U |
NXP |
Thyristors logic level | |
12 | BT258U-500R |
NXP |
Thyristors logic level |