Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT258U series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PAR.
ior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BT258U-600R |
NXP |
Thyristors logic level | |
2 | BT258U-800R |
NXP |
Thyristors logic level | |
3 | BT258U |
NXP |
Thyristors logic level | |
4 | BT258 |
NXP |
Thyristors logic level | |
5 | BT258-500R |
NXP |
Thyristors logic level | |
6 | BT258-600R |
NXP |
Thyristors logic level | |
7 | BT258-800R |
NXP |
Thyristors logic level | |
8 | BT258-800R |
WeEn |
Logic level thyristor | |
9 | BT258B |
NXP |
Thyristors logic level | |
10 | BT258B-500R |
NXP |
Thyristors logic level | |
11 | BT258B-600R |
NXP |
Thyristors logic level | |
12 | BT258B-800R |
NXP |
Thyristors logic level |