Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT258B series QUICK REFERENCE DATA SYMBO.
= 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms per.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BT258B-500R |
NXP |
Thyristors logic level | |
2 | BT258B-800R |
NXP |
Thyristors logic level | |
3 | BT258B |
NXP |
Thyristors logic level | |
4 | BT258 |
NXP |
Thyristors logic level | |
5 | BT258-500R |
NXP |
Thyristors logic level | |
6 | BT258-600R |
NXP |
Thyristors logic level | |
7 | BT258-800R |
NXP |
Thyristors logic level | |
8 | BT258-800R |
WeEn |
Logic level thyristor | |
9 | BT258S-800LT |
NXP Semiconductors |
SCR logic level | |
10 | BT258S-800R |
NXP |
Thyristors logic level | |
11 | BT258S-800R |
WeEn |
thyristor | |
12 | BT258S-800R |
INCHANGE |
Thyristors |