N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (n.
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No second breakdown QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 150 mA; VGS = 5 V Transfer admittance ID = 200 mA; VDS = 5 V PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain PIN CONFIGURATION Yfs typ. RDS(on) typ. max. VDS VDS(SM) VGSO ID Ptot max. max. max. max. max.
BST72A
80 V 100 V 20 V 300 mA 0.83 W
7 Ω 10 Ω
150 mS
handbook, halfpage
d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BST70 |
NXP |
N-channel transistor | |
2 | BST70A |
NXP |
N-channel transistor | |
3 | BST74A |
NXP |
N-channel transistor | |
4 | BST76 |
NXP |
N-channel transistor | |
5 | BST76A |
NXP |
N-channel transistor | |
6 | BST100 |
NXP |
P-channel transistor | |
7 | BST120 |
NXP |
P-channel transistor | |
8 | BST122 |
NXP |
P-channel transistor | |
9 | BST15 |
NXP |
PNP transistors | |
10 | BST15 |
Zetex Semiconductors |
SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
11 | BST16 |
Zetex Semiconductors |
PNP TRANSISTOR | |
12 | BST16 |
NXP |
PNP transistors |