BSS315P OptiMOS™-P 2 Small-Signal-Transistor Features • P-channel • Enhancement mode •Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 •100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 150 270 -1.5 A V mΩ PG-SOT-23 3 1 2 Type BSS315P Package PG-SOT-23 Tape and Reel Information L632.
• P-channel
• Enhancement mode
•Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
•100% lead-free; RoHS compliant
Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 150 270 -1.5 A V mΩ
PG-SOT-23
3
1 2
Type BSS315P
Package PG-SOT-23
Tape and Reel Information L6327: 3000 pcs/ reel
Marking YCs
Lead Free Yes
Packing Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=-1.5 A, R GS=25 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSS314PE |
Infineon |
Small-Signal-Transistor | |
2 | BSS316N |
Infineon |
Small-Signal-Transistor | |
3 | BSS306N |
Infineon |
Small-Signal-Transistor | |
4 | BSS308PE |
Infineon |
Small-Signal-Transistor | |
5 | BSS308PE |
VBsemi |
P-Channel MOSFET | |
6 | BSS340NW |
Infineon |
MOSFET | |
7 | BSS38 |
Micro Electronics |
NPN SILICON TRANSISTOR | |
8 | BSS38 |
Micro Electronics |
NPN SILICON TRANSISTOR | |
9 | BSS100 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor | |
10 | BSS100 |
Fairchild Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | BSS101 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor | |
12 | BSS110 |
Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor |