BSS306N OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 57 93 2.3 A V mΩ PG-SOT23 3 1 2 Type BSS306N Package SOT23 Tape and Reel Information L6327: 3000 p.
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 57 93 2.3 A V mΩ
PG-SOT23
3
1 2
Type BSS306N
Package SOT23
Tape and Reel Information L6327: 3000 pcs/ reel
Marking SWs
Lead Free Yes
Packing Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=2.3 A, R GS=25 Ω I D=2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSS308PE |
Infineon |
Small-Signal-Transistor | |
2 | BSS308PE |
VBsemi |
P-Channel MOSFET | |
3 | BSS314PE |
Infineon |
Small-Signal-Transistor | |
4 | BSS315P |
Infineon |
Small-Signal-Transistor | |
5 | BSS316N |
Infineon |
Small-Signal-Transistor | |
6 | BSS340NW |
Infineon |
MOSFET | |
7 | BSS38 |
Micro Electronics |
NPN SILICON TRANSISTOR | |
8 | BSS38 |
Micro Electronics |
NPN SILICON TRANSISTOR | |
9 | BSS100 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor | |
10 | BSS100 |
Fairchild Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
11 | BSS101 |
Siemens Semiconductor |
SIPMOS Small-Signal Transistor | |
12 | BSS110 |
Fairchild Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor |