BSS308PE - VBsemi

BSS308PE P-Channel MOSFET

BSS308PE www.VBsemi.com BSS308PE P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 -5 -4.5 Qg (Typ.) 11.4 nC (SOT-23) S TO-236 FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook A.

Features

• TrenchFET® Power MOSFET
• 100 % Rg Tested APPLICATIONS
• For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 S2 3D Top View G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C - 30 ± 20 - 5.6 - 5.1 - 5.4b,c - 4.3b,c Pulsed Drain Current (t = 100 µs) Continous Source-Drain Diode Current Maximum Power Dissipation IDM TC = 25 °C TA = 25 °C IS TC = 25 °C TC =.