BSS297 - Siemens Semiconductor

BSS297 SIPMOS Small-Signal Transistor

BSS 297 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 297 Type BSS 297 BSS 297 Pin 2 D Marking SS 297 Pin 3 S VDS 200 V ID 0.48 A RDS(on) 2Ω Package TO-92 Ordering Code Q67000-S118 Q67000-S292 Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Drain source voltag.

Features

s, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.4 0.1 8 10 0.95 1.1 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 2 3.3 VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C VDS = 130 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.45 A VGS = 4.5 V, ID = 0.45 A .