BSS295 - Siemens Semiconductor

BSS295 SIPMOS Small-Signal Transistor

BSS 295 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 295 Type BSS 295 BSS 295 Pin 2 D Marking SS 295 Pin 3 S VDS 50 V ID 1.4 A RDS(on) 0.3 Ω Package TO-92 Ordering Code Q67000-S238 Q67000-S105 Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Drain source volta.

Features

at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.4 0.1 8 10 0.25 0.45 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 0.3 0.5 VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 125 °C VDS = 30 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 1.4 A VGS = 4.5 V, ID = 1.4 A Semic.