BSS296 - Siemens Semiconductor

BSS296 SIPMOS Small-Signal Transistor

BSS 296 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 296 Type BSS 296 Pin 2 D Marking SS 296 Pin 3 S VDS 100 V ID 0.8 A RDS(on) 0.8 Ω Package TO-92 Ordering Code Q62702-S217 Tape and Reel Information E6296 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Sym.

Features

herwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.4 0.1 8 10 0.5 0.6 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 0.8 1.4 VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.8 A VGS = 4.5 V, ID = 0.8 A Semiconductor Group 2 12/.