BSL296SN - Infineon Technologies

BSL296SN MOSFET

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Small-Signal-Transistor,100V BSL296SN DataSheet Rev.2.0 Final Industrial&Multimarket OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • RoHS compliant • Halogen-free according to IEC612.

Features

• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• RoHS compliant
• Halogen-free according to IEC61249-2-21 BSL296SN Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 100 V 460 mΩ 560 1.4 A PG-TSOP6 65 4 1 23 Type BSL296SN Package TSOP6 Tape and Reel Info H6327: 3000 pcs/ reel Marking sLZ Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS dv /dt T A=25 °C T A=70 °.