OptiMOS™2 Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen free according to IEC61249-2-21 BSL214N Product Summary VDS RDS(on),max ID VGS=4.5 V VGS=2.5 V 20 V 140 mW 250 1.5 A PG-TSOP6 65 4 1 2 3 Type BS.
• Dual N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
BSL214N
Product Summary
VDS RDS(on),max
ID
VGS=4.5 V VGS=2.5 V
20 V 140 mW 250 1.5 A
PG-TSOP6
65 4
1 2
3
Type BSL214N
Package TSOP6
Tape and Reel Information H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter 1)
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=70 °C T A=25 °C
Marking sPM
Avalanche energ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSL211 |
Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor | |
2 | BSL211SP |
Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor | |
3 | BSL215C |
Infineon Technologies |
Small-Signal-Transistor | |
4 | BSL215P |
Infineon Technologies |
Small-Signal-Transistor | |
5 | BSL202SN |
Infineon Technologies |
Small-Signal-Transistor | |
6 | BSL205N |
Infineon Technologies |
Small-Signal-Transistor | |
7 | BSL207N |
Infineon Technologies |
Small-Signal-Transistor | |
8 | BSL207SP |
Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor | |
9 | BSL296SN |
Infineon Technologies |
MOSFET | |
10 | BSL302SN |
Infineon Technologies |
Small-Signal-Transistor | |
11 | BSL303SPE |
Infineon Technologies |
MOSFET | |
12 | BSL305SPE |
Infineon Technologies |
MOSFET |