OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSD816SN Product Summary VDS RDS(on),max ID VGS=2.5 V VGS=1.8 V 20 V 160 mW 240 1.4 A PG-SOT363 65 4 1 2 3 Type Packa.
• N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSD816SN
Product Summary
VDS RDS(on),max
ID
VGS=2.5 V VGS=1.8 V
20 V 160 mW 240 1.4 A
PG-SOT363
65 4
1 2 3
Type
Package
Tape and Reel Information
BSD816SN PG-SOT363 H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=70 °C T A=25 °C
Marking XAs
Avalanche energy.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSD840N |
Infineon Technologies |
Small-Signal-Transistor | |
2 | BSD214SN |
Infineon |
Small-Signal-Transistor | |
3 | BSD22 |
NXP |
MOSFET N-channel depletion switching transistor | |
4 | BSD223P |
Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor | |
5 | BSD235C |
Infineon Technologies |
Small-Signal-Transistor | |
6 | BSD235N |
Infineon Technologies |
Small-Signal-Transistor | |
7 | BSD314SPE |
Infineon Technologies AG |
3 Small-Signal-Transistor | |
8 | BSD316SN |
Infineon Technologies AG |
2 Small-Signal-Transistor | |
9 | BSD340N |
Infineon |
MOSFET | |
10 | BSD5 |
Boshida |
Single / Dual Output | |
11 | BSD5-W |
Boshida |
Single / Dual Output | |
12 | BSD5C051U |
BORN |
Transient Voltage Suppressors |