Transient Voltage Suppressors Features Small Body Outline Dimensions: 0.063″ x 0.032″ (1.6x0.8 mm) Low Body Height: 0.024″ (0.6 mm) Nom 100 Watts peak pulse power (tp = 8/20μs) Protects one I/O or power line Replacement for MLV(0603) Low clamping voltage Working voltage: 5V Low leakage current Solid-state silicon-avalanche technology BSD5C051U ROHS IEC COM.
Small Body Outline Dimensions: 0.063″ x 0.032″ (1.6x0.8 mm) Low Body Height: 0.024″ (0.6 mm) Nom 100 Watts peak pulse power (tp = 8/20μs) Protects one I/O or power line Replacement for MLV(0603) Low clamping voltage Working voltage: 5V Low leakage current Solid-state silicon-avalanche technology BSD5C051U ROHS IEC COMPATIBILITY (EN61000-4) IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 4.5A (8/20μs) Mechanical Characteristics Applications JEDEC SOD-523 package Molding compound flammability rating: UL 94V-0 Marking : Marking Code.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSD5 |
Boshida |
Single / Dual Output | |
2 | BSD5-W |
Boshida |
Single / Dual Output | |
3 | BSD214SN |
Infineon |
Small-Signal-Transistor | |
4 | BSD22 |
NXP |
MOSFET N-channel depletion switching transistor | |
5 | BSD223P |
Infineon Technologies AG |
OptiMOS -P Small-Signal-Transistor | |
6 | BSD235C |
Infineon Technologies |
Small-Signal-Transistor | |
7 | BSD235N |
Infineon Technologies |
Small-Signal-Transistor | |
8 | BSD314SPE |
Infineon Technologies AG |
3 Small-Signal-Transistor | |
9 | BSD316SN |
Infineon Technologies AG |
2 Small-Signal-Transistor | |
10 | BSD340N |
Infineon |
MOSFET | |
11 | BSD6M18VG-3D |
BEST STAR OPTOELECTRONIC |
LED LCD TV motherboard | |
12 | BSD816SN |
Infineon Technologies |
Small-Signal-Transistor |