BSD223P - Infineon Technologies AG

BSD223P OptiMOS -P Small-Signal-Transistor

BSD 223P OptiMOS-P Small-Signal-Transistor Feature • Dual P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 1.2 -0.39 V Ω A PG-SOT-363 4 5 6 • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 3 2 1 VPS05604 MOSFET1: .

Features

6 ±12 0.25 -55... +150 55/150/56 Class 0 Unit A mJ kV/µs V W °C Rev.1.6 Page 1 2014-07-29 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient, leaded BSD 223P Symbol Values Unit min. typ. max. RthJS RthJA - - 180 K/W - - 500 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA V(BR)DSS -20 - -V Gate threshold voltage, VGS = VDS VGS(th) -0.6 -0.9 -1.2 ID =-.