BSC079N10NSG - Infineon Technologies

BSC079N10NSG OptiMOS2 Power-Transistor

www.DataSheet.co.kr BSC079N10NS G OptiMOS™2 Power-Transistor Features • N-channel, Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 .

Features

• N-channel, Normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 7.9 100 V mΩ A
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 Type BSC079N10NS G Package PG-TDSON-8 Marking 079N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=.