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•Idealforhigh-frequencyswitching
•Optimizedforchargers
•100%avalanchetested
•Superiorthermalresistance
•N-channel,Logiclevel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•QualifiedforStandardGradeapplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
2.7
mΩ
ID 100 A
Qoss
43
nC
QG(0..4.5V)
24
nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode BSC0702LS
Package PG-TDSON-8
Marking 0702LS
RelatedLinks -
Final Data Sheet
1 Rev.2.3,2016-10-25.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSC070N10NS3 |
Infineon |
Power-Transistor MOSFET |
|
| 2 | BSC070N10NS3G |
Infineon Technologies |
Power-Transistor MOSFET |
|
| 3 | BSC070N10NS5 |
Infineon |
MOSFET |
|
| 4 | BSC072N025S |
Infineon Technologies |
Power-Transistor |
|
| 5 | BSC072N025SG |
Infineon Technologies |
Power-Transistor |
|
| 6 | BSC072N03LDG |
Infineon Technologies |
OptiMOS3 Power-Transistors |
|
| 7 | BSC072N08NS5 |
Infineon |
MOSFET |
|
| 8 | BSC076N06NS3G |
Infineon Technologies |
Power-Transistor |
|
| 9 | BSC077N12NS3G |
Infineon Technologies |
MOSFET |
|
| 10 | BSC079N03LSCG |
Infineon |
Power-Transistor |
|
| 11 | BSC079N03S |
Infineon Technologies |
Power-Transistor |
|
| 12 | BSC079N03SG |
Infineon Technologies |
Power-Transistor |
|