BSC076N06NS3G - Infineon Technologies

BSC076N06NS3G Power-Transistor

Type OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications •.

Features

• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21 Type BSC076N06NS3 G BSC076N06NS3 G Product Summary VDS RDS(on),max ID 60 V 7.6 mW 50 A Package PG-TDSON-8 Marking 076N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continu.