BM15N10 - Bookly

BM15N10 100V N-Channel Enhancement Mode MOSFET

The 15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology. The high density process is especially able to minize on-state resistance.These devices are. especially suited for low voltage application power management DC-DC converters. FEATURE 100V/15 A,RDS(ON)=80.0mΩ (typ.)@VGS=10V 100V.

Features

300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy, Single Pulsed (L=0.3mH) TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C 100 ±20 175 -55 to 175 5 64 44 15 11 60 30 2.5 50 30 V °C °C A A A W °C/W °C/W mJ AP15N10DL 100V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS(TA=25℃ Unless otherwise noted) Symbol Parameter Test Conditions Min. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain C.