BM100-28 - ASI

BM100-28 NPN SILICON RF POWER TRANSISTOR

The ASI BM100-28 is Designed for high power VHF Applications up to 200 MHz. FEATURES: • Common Emitter • PG = 8.5 dB at 20 W/175 MHz • Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θJC O O 20 A 33 V 65 V 4.0 V 270 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.65 C/W O O O O 1 = COLLECTOR 2 = .

Features

• Common Emitter
• PG = 8.5 dB at 20 W/175 MHz
• Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θJC O O 20 A 33 V 65 V 4.0 V 270 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.65 C/W O O O O 1 = COLLECTOR 2 = BASE 3&4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE CCB PG ηC IC = 50 mA TC = 25 C O NONETEST CONDITIONS IC = 100 mA IE = 5.0 mA VCE = 5.0 V VVB = 28 V VCC = 28 V POUT = 100 W IC = 1.0 A f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 33 65 4.0 10 200 8.5 60 UNITS V V V --pF dB % A D V A N C E D S E M I C .