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BM15N10 |
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| Part Number | BM15N10 |
| Manufacturer | Bookly |
| Description | The 15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology. The high density process is especially able to minize on-state resi... |
| Features |
300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy, Single Pulsed (L=0.3mH)
TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C
100 ±20 175 -55 to 175
5 64 44 15 11 60 30 2.5 50 30
V °C °C A A
A
W °C/W °C/W mJ
AP15N10DL
100V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS(TA=25℃ Unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain C... |
| Document |
 BM15N10 Data Sheet
PDF 249.42KB |
| Distributor | Stock | Price | Buy |
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