160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k (MHz) (mA) (V) (W) (dB) (%) (dBc) IS-95 2300 to 2400 1200 28 30 18.5 27.5 45.
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2300 MHz to 2400 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF7G24LS-100 |
Ampleon |
Power LDMOS transistor | |
2 | BLF7G24LS-140 |
Ampleon |
Power LDMOS transistor | |
3 | BLF7G24L-100 |
Ampleon |
Power LDMOS transistor | |
4 | BLF7G24L-140 |
Ampleon |
Power LDMOS transistor | |
5 | BLF7G24L-160P |
Ampleon |
Power LDMOS transistor | |
6 | BLF7G20L-160P |
NXP |
Power LDMOS transistor | |
7 | BLF7G20L-200 |
Ampleon |
Power LDMOS transistor | |
8 | BLF7G20L-200 |
NXP |
Power LDMOS transistor | |
9 | BLF7G20L-250P |
Ampleon |
Power LDMOS transistor | |
10 | BLF7G20L-90P |
Ampleon |
Power LDMOS transistor | |
11 | BLF7G20LS-160P |
NXP |
Power LDMOS transistor | |
12 | BLF7G20LS-200 |
Ampleon |
Power LDMOS transistor |