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200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1620 28 55 1.
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1990 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low-memory effects providing excellent digital pre-distortion capability
Internally matched for ease of .
BLF7G20LS-200 - NXP
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical pe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF7G20LS-250P |
Ampleon |
Power LDMOS transistor |
|
| 2 | BLF7G20LS-160P |
NXP |
Power LDMOS transistor |
|
| 3 | BLF7G20LS-90P |
Ampleon |
Power LDMOS transistor |
|
| 4 | BLF7G20L-160P |
NXP |
Power LDMOS transistor |
|
| 5 | BLF7G20L-200 |
Ampleon |
Power LDMOS transistor |
|
| 6 | BLF7G20L-200 |
NXP |
Power LDMOS transistor |
|
| 7 | BLF7G20L-250P |
Ampleon |
Power LDMOS transistor |
|
| 8 | BLF7G20L-90P |
Ampleon |
Power LDMOS transistor |
|
| 9 | BLF7G21L-160P |
Ampleon |
Power LDMOS transistor |
|
| 10 | BLF7G21LS-160P |
Ampleon |
Power LDMOS transistor |
|
| 11 | BLF7G22L-200 |
Ampleon |
Power LDMOS transistor |
|
| 12 | BLF7G22L-250P |
Ampleon |
Power LDMOS transistor |
|