100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20 .
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF7G24L-140 |
Ampleon |
Power LDMOS transistor | |
2 | BLF7G24L-160P |
Ampleon |
Power LDMOS transistor | |
3 | BLF7G24LS-100 |
Ampleon |
Power LDMOS transistor | |
4 | BLF7G24LS-140 |
Ampleon |
Power LDMOS transistor | |
5 | BLF7G24LS-160P |
Ampleon |
Power LDMOS transistor | |
6 | BLF7G20L-160P |
NXP |
Power LDMOS transistor | |
7 | BLF7G20L-200 |
Ampleon |
Power LDMOS transistor | |
8 | BLF7G20L-200 |
NXP |
Power LDMOS transistor | |
9 | BLF7G20L-250P |
Ampleon |
Power LDMOS transistor | |
10 | BLF7G20L-90P |
Ampleon |
Power LDMOS transistor | |
11 | BLF7G20LS-160P |
NXP |
Power LDMOS transistor | |
12 | BLF7G20LS-200 |
Ampleon |
Power LDMOS transistor |