250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1900 28 70 1.
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical pe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF7G22L-200 |
Ampleon |
Power LDMOS transistor | |
2 | BLF7G22LS-130 |
NXP Semiconductors |
Power LDMOS transistor | |
3 | BLF7G22LS-200 |
Ampleon |
Power LDMOS transistor | |
4 | BLF7G22LS-250P |
Ampleon |
Power LDMOS transistor | |
5 | BLF7G22LS-250P |
NXP |
Power LDMOS transistor | |
6 | BLF7G20L-160P |
NXP |
Power LDMOS transistor | |
7 | BLF7G20L-200 |
Ampleon |
Power LDMOS transistor | |
8 | BLF7G20L-200 |
NXP |
Power LDMOS transistor | |
9 | BLF7G20L-250P |
Ampleon |
Power LDMOS transistor | |
10 | BLF7G20L-90P |
Ampleon |
Power LDMOS transistor | |
11 | BLF7G20LS-160P |
NXP |
Power LDMOS transistor | |
12 | BLF7G20LS-200 |
Ampleon |
Power LDMOS transistor |