160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) .
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF7G21LS-160P |
Ampleon |
Power LDMOS transistor | |
2 | BLF7G20L-160P |
NXP |
Power LDMOS transistor | |
3 | BLF7G20L-200 |
Ampleon |
Power LDMOS transistor | |
4 | BLF7G20L-200 |
NXP |
Power LDMOS transistor | |
5 | BLF7G20L-250P |
Ampleon |
Power LDMOS transistor | |
6 | BLF7G20L-90P |
Ampleon |
Power LDMOS transistor | |
7 | BLF7G20LS-160P |
NXP |
Power LDMOS transistor | |
8 | BLF7G20LS-200 |
Ampleon |
Power LDMOS transistor | |
9 | BLF7G20LS-200 |
NXP |
Power LDMOS transistor | |
10 | BLF7G20LS-250P |
Ampleon |
Power LDMOS transistor | |
11 | BLF7G20LS-90P |
Ampleon |
Power LDMOS transistor | |
12 | BLF7G22L-200 |
Ampleon |
Power LDMOS transistor |