50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) 2-carrier W-CDMA 2500 to 2700 430 28 3 16.5 14.5 ACPR (dBc) 47 [1] .
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
Integrated current sense
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applicat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF6G27L-40P |
Ampleon |
Power LDMOS transistor | |
2 | BLF6G27LS-135 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
3 | BLF6G27LS-40P |
Ampleon |
Power LDMOS transistor | |
4 | BLF6G27LS-40PG |
Ampleon |
Power LDMOS transistor | |
5 | BLF6G27LS-75 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
6 | BLF6G27-10 |
Ampleon |
Power LDMOS transistor | |
7 | BLF6G27-10 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
8 | BLF6G27-10G |
Ampleon |
Power LDMOS transistor | |
9 | BLF6G27-10G |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
10 | BLF6G27-135 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
11 | BLF6G27-45 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
12 | BLF6G27-75 |
NXP Semiconductors |
WiMAX power LDMOS transistor |