45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 7 Gp (dB) 18 ηD (%) 24 ACPR885k (dBc) −49[2] ACPR1980k (dBc) −64.
I Typical 1-carrier N-CDMA performance (single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 350 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF6G27-10 |
Ampleon |
Power LDMOS transistor | |
2 | BLF6G27-10 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
3 | BLF6G27-10G |
Ampleon |
Power LDMOS transistor | |
4 | BLF6G27-10G |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
5 | BLF6G27-135 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
6 | BLF6G27-75 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
7 | BLF6G27L-40P |
Ampleon |
Power LDMOS transistor | |
8 | BLF6G27L-50BN |
Ampleon |
Power LDMOS transistor | |
9 | BLF6G27LS-135 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
10 | BLF6G27LS-40P |
Ampleon |
Power LDMOS transistor | |
11 | BLF6G27LS-40PG |
Ampleon |
Power LDMOS transistor | |
12 | BLF6G27LS-75 |
NXP Semiconductors |
WiMAX power LDMOS transistor |