75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 9 PL(M) Gp (W) 75 (dB) 17 ηD 23 ACPR885k ACPR1980k (dBc) −60[2] −.
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 600 mA: N Average output power = 9 W N Power gain = 17 dB N Drain efficiency = 23 % N ACPR885 = −50.0 dBc in 30 kHz bandwidth I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2500 MHz to 2700 MHz) I Inter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF6G27-10 |
Ampleon |
Power LDMOS transistor | |
2 | BLF6G27-10 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
3 | BLF6G27-10G |
Ampleon |
Power LDMOS transistor | |
4 | BLF6G27-10G |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
5 | BLF6G27-135 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
6 | BLF6G27-45 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
7 | BLF6G27L-40P |
Ampleon |
Power LDMOS transistor | |
8 | BLF6G27L-50BN |
Ampleon |
Power LDMOS transistor | |
9 | BLF6G27LS-135 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
10 | BLF6G27LS-40P |
Ampleon |
Power LDMOS transistor | |
11 | BLF6G27LS-40PG |
Ampleon |
Power LDMOS transistor | |
12 | BLF6G27LS-75 |
NXP Semiconductors |
WiMAX power LDMOS transistor |