BLF6G10-200RN - Ampleon

BLF6G10-200RN Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 ACPR (dBc) 39[1] [1] Test signal.

Features

 Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:  Average output power = 40 W  Power gain = 20 dB  Efficiency = 28.5 %  ACPR = 39 dBc
 .