BLF6G10-200RN |
Part Number | BLF6G10-200RN |
Manufacturer | Ampleon |
Description | 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test... |
Features |
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: Average output power = 40 W Power gain = 20 dB Efficiency = 28.5 % ACPR = 39 dBc ... |
Document |
BLF6G10-200RN Data Sheet
PDF 363.92KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | BLF6G10-45 |
NXP |
Power LDMOS Transistor | |
2 | BLF6G10L-40BRN |
NXP Semiconductors |
Power LDMOS transistor | |
3 | BLF6G10LS-135R |
NXP Semiconductors |
Power LDMOS transistor | |
4 | BLF6G10LS-200 |
NXP Semiconductors |
Power LDMOS transistor | |
5 | BLF6G10LS-200R |
NXP Semiconductors |
Power LDMOS transistor |